JPS4945649A - - Google Patents

Info

Publication number
JPS4945649A
JPS4945649A JP6098273A JP6098273A JPS4945649A JP S4945649 A JPS4945649 A JP S4945649A JP 6098273 A JP6098273 A JP 6098273A JP 6098273 A JP6098273 A JP 6098273A JP S4945649 A JPS4945649 A JP S4945649A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6098273A
Other languages
Japanese (ja)
Other versions
JPS5636513B2 (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4945649A publication Critical patent/JPS4945649A/ja
Publication of JPS5636513B2 publication Critical patent/JPS5636513B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408Address circuits
    • G11C11/4085Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP6098273A 1972-06-30 1973-06-01 Expired JPS5636513B2 (en])

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00267805A US3810124A (en) 1972-06-30 1972-06-30 Memory accessing system

Publications (2)

Publication Number Publication Date
JPS4945649A true JPS4945649A (en]) 1974-05-01
JPS5636513B2 JPS5636513B2 (en]) 1981-08-25

Family

ID=23020194

Family Applications (2)

Application Number Title Priority Date Filing Date
JP6098273A Expired JPS5636513B2 (en]) 1972-06-30 1973-06-01
JP17481780A Granted JPS5698786A (en) 1972-06-30 1980-12-12 Memory access system

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP17481780A Granted JPS5698786A (en) 1972-06-30 1980-12-12 Memory access system

Country Status (11)

Country Link
US (1) US3810124A (en])
JP (2) JPS5636513B2 (en])
CA (1) CA1028061A (en])
CH (1) CH548084A (en])
DD (1) DD104864A5 (en])
ES (1) ES415975A1 (en])
FR (1) FR2191202B1 (en])
GB (1) GB1427156A (en])
IT (1) IT983932B (en])
NL (1) NL167789B (en])
SU (1) SU654197A3 (en])

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080735A (en]) * 1973-11-14 1975-07-01
JPS5166736A (en]) * 1974-10-30 1976-06-09 Hitachi Ltd
JPS51147224A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor memory
JPS5292630U (en]) * 1975-12-31 1977-07-11
JPS52108741A (en) * 1976-03-08 1977-09-12 Ibm Circuit for clamping word wire
JPS52155928A (en) * 1976-06-21 1977-12-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS6168865U (en]) * 1984-10-09 1986-05-12

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2258783B1 (en]) * 1974-01-25 1977-09-16 Valentin Camille
US4025908A (en) * 1975-06-24 1977-05-24 International Business Machines Corporation Dynamic array with clamped bootstrap static input/output circuitry
US4086662A (en) * 1975-11-07 1978-04-25 Hitachi, Ltd. Memory system with read/write control lines
JPS5922316B2 (ja) * 1976-02-24 1984-05-25 株式会社東芝 ダイナミツクメモリ装置
US4188671A (en) * 1977-01-24 1980-02-12 Bell Telephone Laboratories, Incorporated Switched-capacitor memory
JPS544086A (en) * 1977-06-10 1979-01-12 Fujitsu Ltd Memory circuit unit
JPS55150189A (en) * 1979-05-10 1980-11-21 Nec Corp Memory circuit
JPS5847796B2 (ja) * 1979-05-26 1983-10-25 富士通株式会社 半導体メモリ装置
JPS5619585A (en) * 1979-07-26 1981-02-24 Toshiba Corp Semiconductor memory unit
US4357687A (en) * 1980-12-11 1982-11-02 Fairchild Camera And Instr. Corp. Adaptive word line pull down
JPS57212690A (en) * 1981-06-24 1982-12-27 Hitachi Ltd Dynamic mos memory device
JPS58153294A (ja) * 1982-03-04 1983-09-12 Mitsubishi Electric Corp 半導体記憶装置
JPS5948890A (ja) * 1982-09-10 1984-03-21 Nec Corp メモリ回路
JPS5960794A (ja) * 1982-09-29 1984-04-06 Fujitsu Ltd ダイナミツク型半導体記憶装置
JPS59116985A (ja) * 1982-11-29 1984-07-06 Fujitsu Ltd 半導体記憶装置
JPH07105140B2 (ja) * 1988-12-16 1995-11-13 日本電気株式会社 半導体メモリ
EP0793176B1 (en) * 1996-03-01 1999-06-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device capable of preventing malfunction due to disconnection of word select line
EP0953983A3 (en) * 1996-03-01 2005-10-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with clamping circuit for preventing malfunction
DE19823956A1 (de) * 1998-05-28 1999-12-02 Siemens Ag Anordnung zur Übersprechdämpfung in Wortleitungen von DRAM-Schaltungen
US20070165479A1 (en) * 2006-01-17 2007-07-19 Norbert Rehm Local wordline driver scheme to avoid fails due to floating wordline in a segmented wordline driver scheme

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1549076A1 (de) * 1967-12-22 1971-01-21 Standard Elek K Lorenz Ag Assoziativer Speicher
US3699537A (en) * 1969-05-16 1972-10-17 Shell Oil Co Single-rail mosfet memory with capacitive storage
US3708788A (en) * 1971-11-11 1973-01-02 Ibm Associative memory cell driver and sense amplifier circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080735A (en]) * 1973-11-14 1975-07-01
JPS5166736A (en]) * 1974-10-30 1976-06-09 Hitachi Ltd
JPS51147224A (en) * 1975-06-13 1976-12-17 Hitachi Ltd Semiconductor memory
JPS5292630U (en]) * 1975-12-31 1977-07-11
JPS52108741A (en) * 1976-03-08 1977-09-12 Ibm Circuit for clamping word wire
JPS52155928A (en) * 1976-06-21 1977-12-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS6168865U (en]) * 1984-10-09 1986-05-12

Also Published As

Publication number Publication date
CH548084A (de) 1974-04-11
FR2191202A1 (en]) 1974-02-01
DE2324300B2 (de) 1976-06-16
IT983932B (it) 1974-11-11
NL167789B (nl) 1981-08-17
JPS5698786A (en) 1981-08-08
NL7308695A (en]) 1974-01-02
CA1028061A (en) 1978-03-14
JPS5636513B2 (en]) 1981-08-25
DD104864A5 (en]) 1974-03-20
ES415975A1 (es) 1976-05-16
GB1427156A (en) 1976-03-10
JPS5733629B2 (en]) 1982-07-17
US3810124A (en) 1974-05-07
FR2191202B1 (en]) 1976-05-28
DE2324300A1 (de) 1974-01-17
SU654197A3 (ru) 1979-03-25

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